Model Number |
FDD3860 |
FQI9N50CTU |
Model Name |
onsemi FDD3860 |
onsemi FQI9N50CTU |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
100V 6.2A 36mΩ@5.9A,10V 4.5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
500V 9A 135W 800mΩ@4.5A,10V 4V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.085 grams / 0.002998 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-252 |
I2PAK(TO-262) |
Package / Arrange |
Tape & Reel (TR) |
Tube-packed |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
100V |
500V |
Continuous Drain Current (Id) |
6.2A |
9A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
36mΩ@5.9A,10V |
800mΩ@4.5A,10V |
Power Dissipation (Pd) |
3.1W;69W |
135W |
Gate Threshold Voltage (Vgs(th)@Id) |
4.5V@250uA |
4V@250uA |
Reverse Transfer Capacitance (Crss@Vds) |
- |
N/A |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
1.74nF@50V |
1.03nF@25V |
Total Gate Charge (Qg@Vgs) |
31nC@10V |
35nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |