| Model Number |
| FDD3860 |
NTMFD4C50NT1G |
| Model Name |
| onsemi FDD3860 |
onsemi NTMFD4C50NT1G |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 100V 6.2A 36mΩ@5.9A,10V 4.5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
2 N-Channel DFN-8-EP(5.2x6.2) MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.085 grams / 0.002998 oz |
0.215 grams / 0.007584 oz |
| Package / Case |
| TO-252 |
DFN-8-EP(5.2x6.2) |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
- |
| Drain Source Voltage (Vdss) |
| 100V |
- |
| Continuous Drain Current (Id) |
| 6.2A |
- |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 36mΩ@5.9A,10V |
- |
| Power Dissipation (Pd) |
| 3.1W;69W |
- |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4.5V@250uA |
- |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
- |
| Type |
| 1PCSNChannel |
2 N-Channel |
| Input Capacitance (Ciss@Vds) |
| 1.74nF@50V |
- |
| Total Gate Charge (Qg@Vgs) |
| 31nC@10V |
- |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
N/A |
