Model Number |
FDD3860 |
NVTFS9D6P04M8LTAG |
Model Name |
onsemi FDD3860 |
onsemi NVTFS9D6P04M8LTAG |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
100V 6.2A 36mΩ@5.9A,10V 4.5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
40V 7.5mΩ@10V,20A 2.4V@580uA 1PCSPChannel WDFN-8(3.3x3.3) MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.085 grams / 0.002998 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-252 |
WDFN-8(3.3x3.3) |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
100V |
40V |
Continuous Drain Current (Id) |
6.2A |
13A;64A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
36mΩ@5.9A,10V |
7.5mΩ@10V,20A |
Power Dissipation (Pd) |
3.1W;69W |
3.2W;75W |
Gate Threshold Voltage (Vgs(th)@Id) |
4.5V@250uA |
2.4V@580uA |
Reverse Transfer Capacitance (Crss@Vds) |
- |
31pF@20V |
Type |
1PCSNChannel |
1PCSPChannel |
Input Capacitance (Ciss@Vds) |
1.74nF@50V |
2.312nF@20V |
Total Gate Charge (Qg@Vgs) |
31nC@10V |
34.6nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |