Model Number |
FDD86250 |
FQI4N20 |
Model Name |
onsemi FDD86250 |
onsemi FQI4N20 |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
150V 22mΩ@10V,8A 4V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
200V 3.6A 1.4Ω@1.8A,10V 5V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.374 grams / 0.013192 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-252 |
I2PAK(TO-262) |
Package / Arrange |
Tape & Reel (TR) |
Bag-packed |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
150V |
200V |
Continuous Drain Current (Id) |
8A;50A |
3.6A |
Power Dissipation (Pd) |
3.1W;132W |
3.13W;45W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
22mΩ@10V,8A |
1.4Ω@1.8A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@250uA |
5V@250uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
2.11nF@75V |
220pF@25V |
Total Gate Charge (Qg@Vgs) |
33nC@10V |
6.5nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |