Model Number |
FDN361AN |
FDS6673BZ-G |
Model Name |
onsemi FDN361AN |
onsemi FDS6673BZ-G |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
30V 1.8A 100mΩ@1.8A,10V 500mW 3V@250uA 1PCSNChannel SOT-23-3 MOSFETs ROHS |
30V 14.5A 7.8mΩ@14.5A,10V 1W 3V@250uA 1PCSPChannel SOIC-8 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.030 grams / 0.001058 oz |
0.215 grams / 0.007584 oz |
Package / Case |
SOT-23-3 |
SOIC-8 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
30V |
30V |
Continuous Drain Current (Id) |
1.8A |
14.5A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
100mΩ@1.8A,10V |
7.8mΩ@14.5A,10V |
Power Dissipation (Pd) |
500mW |
1W |
Gate Threshold Voltage (Vgs(th)@Id) |
3V@250uA |
3V@250uA |
Type |
1PCSNChannel |
1PCSPChannel |
Input Capacitance (Ciss@Vds) |
220pF@15V |
4.7nF@15V |
Total Gate Charge (Qg@Vgs) |
4nC@5V |
65nC@5V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |