Model Number |
FDS6670S |
FQD5P20TM |
Model Name |
onsemi FDS6670S |
onsemi FQD5P20TM |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
30V 13.5A 1W 9mΩ@13.5A,10V 3V@1mA 1PCSNChannel SOIC-8 MOSFETs ROHS |
200V 3.7A 1.4Ω@10V,1.85A 5V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.215 grams / 0.007584 oz |
0.479 grams / 0.016896 oz |
Package / Case |
SOIC-8 |
TO-252-2 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
30V |
200V |
Continuous Drain Current (Id) |
13.5A |
3.7A |
Power Dissipation (Pd) |
1W |
2.5W;45W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
9mΩ@13.5A,10V |
1.4Ω@10V,1.85A |
Gate Threshold Voltage (Vgs(th)@Id) |
3V@1mA |
5V@250uA |
Type |
1PCSNChannel |
1PCSPChannel |
Input Capacitance (Ciss@Vds) |
2.674nF@15V |
430pF@25V |
Total Gate Charge (Qg@Vgs) |
34nC@5V |
13nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |