| Model Number |
| FDS6670S |
FQI17P10TU |
| Model Name |
| onsemi FDS6670S |
onsemi FQI17P10TU |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 30V 13.5A 1W 9mΩ@13.5A,10V 3V@1mA 1PCSNChannel SOIC-8 MOSFETs ROHS |
100V 16.5A 190mΩ@8.25A,10V 4V@250uA 1PCSPChannel I2PAK(TO-262) MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.215 grams / 0.007584 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| SOIC-8 |
I2PAK(TO-262) |
| Package / Arrange |
| Tape & Reel (TR) |
Bag-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 30V |
100V |
| Continuous Drain Current (Id) |
| 13.5A |
16.5A |
| Power Dissipation (Pd) |
| 1W |
3.75W;100W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 9mΩ@13.5A,10V |
190mΩ@8.25A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 3V@1mA |
4V@250uA |
| Type |
| 1PCSNChannel |
1PCSPChannel |
| Input Capacitance (Ciss@Vds) |
| 2.674nF@15V |
1.1nF@25V |
| Total Gate Charge (Qg@Vgs) |
| 34nC@5V |
39nC@10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |
