| Model Number |
| FDS6672A |
FCH190N65F-F085 |
| Model Name |
| onsemi FDS6672A |
onsemi FCH190N65F-F085 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 30V 12.5A 8mΩ@14A,10V 2.5W 2V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS |
650V 20.6A 208W 190mΩ@27A,10V 5V@250uA 1PCSNChannel TO-247-3 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.215 grams / 0.007584 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| SOIC-8 |
TO-247-3 |
| Package / Arrange |
| Tape & Reel (TR) |
Tube-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 30V |
650V |
| Continuous Drain Current (Id) |
| 12.5A |
20.6A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 8mΩ@14A,10V |
190mΩ@27A,10V |
| Power Dissipation (Pd) |
| 2.5W |
208W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 2V@250uA |
5V@250uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 5.07nF@15V |
3.181nF@25V |
| Total Gate Charge (Qg@Vgs) |
| [email protected] |
82nC@10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |
