| Model Number |
| FDS6986S |
FQB6N60TM |
| Model Name |
| onsemi FDS6986S |
onsemi FQB6N60TM |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 30V 900mW 2 N-Channel SOIC-8 MOSFETs ROHS |
600V 6.2A 1.5Ω@3.1A,10V 5V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.215 grams / 0.007584 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| SOIC-8 |
D2PAK(TO-263) |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 30V |
600V |
| Continuous Drain Current (Id) |
| 6.5A;7.9A |
6.2A |
| Power Dissipation (Pd) |
| 900mW |
3.13W;130W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 29mΩ@6.5A,10V;20mΩ@7.9A,10V |
1.5Ω@3.1A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 3V@250uA;3V@1mA |
5V@250uA |
| Type |
| 2 N-Channel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 695pF@10V;1.233nF@10V |
1nF@25V |
| Total Gate Charge (Qg@Vgs) |
| 9nC@5V;16nC@5V |
25nC@10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |
