Model Number |
FDS6986S |
NVMFD5C668NLT1G |
Model Name |
onsemi FDS6986S |
onsemi NVMFD5C668NLT1G |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
30V 900mW 2 N-Channel SOIC-8 MOSFETs ROHS |
60V 68A 5.4mΩ@10V,20A 57.5W 2V@50uA 2 N-Channel DFN-8(5x6) MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.215 grams / 0.007584 oz |
0.400 grams / 0.01411 oz |
Package / Case |
SOIC-8 |
DFN-8(5x6) |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
30V |
60V |
Continuous Drain Current (Id) |
6.5A;7.9A |
68A |
Power Dissipation (Pd) |
900mW |
57.5W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
29mΩ@6.5A,10V;20mΩ@7.9A,10V |
5.4mΩ@10V,20A |
Gate Threshold Voltage (Vgs(th)@Id) |
3V@250uA;3V@1mA |
2V@50uA |
Type |
2 N-Channel |
2 N-Channel |
Input Capacitance (Ciss@Vds) |
695pF@10V;1.233nF@10V |
1.44nF@25V |
Total Gate Charge (Qg@Vgs) |
9nC@5V;16nC@5V |
21.3nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |