Model Number |
FDS86242 |
FQI17N08LTU |
Model Name |
onsemi FDS86242 |
onsemi FQI17N08LTU |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
150V 4.1A 67mΩ@10V,4.1A 4V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS |
80V 16.5A 100mΩ@8.25A,10V 2V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.207 grams / 0.007302 oz |
1.000 grams / 0.035274 oz |
Package / Case |
SOIC-8 |
I2PAK(TO-262) |
Package / Arrange |
Tape & Reel (TR) |
Tube-packed |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
150V |
80V |
Continuous Drain Current (Id) |
4.1A |
16.5A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
67mΩ@10V,4.1A |
100mΩ@8.25A,10V |
Power Dissipation (Pd) |
2.5W;5W |
3.75W;65W |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@250uA |
2V@250uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
760pF@75V |
520pF@25V |
Total Gate Charge (Qg@Vgs) |
13nC@10V |
11.5nC@5V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |