| Model Number |
| FDS86242 |
FQI32N20CTU |
| Model Name |
| onsemi FDS86242 |
onsemi FQI32N20CTU |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 150V 4.1A 67mΩ@10V,4.1A 4V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS |
200V 28A 82mΩ@14A,10V 4V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.207 grams / 0.007302 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| SOIC-8 |
I2PAK(TO-262) |
| Package / Arrange |
| Tape & Reel (TR) |
Tube-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 150V |
200V |
| Continuous Drain Current (Id) |
| 4.1A |
28A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 67mΩ@10V,4.1A |
82mΩ@14A,10V |
| Power Dissipation (Pd) |
| 2.5W;5W |
3.13W;156W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4V@250uA |
4V@250uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 760pF@75V |
2.22nF@25V |
| Total Gate Charge (Qg@Vgs) |
| 13nC@10V |
110nC@10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |
