| Model Number |
| FDS8813NZ |
FQB55N06TM |
| Model Name |
| onsemi FDS8813NZ |
onsemi FQB55N06TM |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 30V 18.5A 2.5W 4.5mΩ@10V,18.5A 3V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS |
60V 55A 20mΩ@27.5A,10V 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.120 grams / 0.004233 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| SOIC-8 |
D2PAK(TO-263) |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 30V |
60V |
| Continuous Drain Current (Id) |
| 18.5A |
55A |
| Power Dissipation (Pd) |
| 2.5W |
3.75W;133W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 4.5mΩ@10V,18.5A |
20mΩ@27.5A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 3V@250uA |
4V@250uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 4.145nF@15V |
1.69nF@25V |
| Total Gate Charge (Qg@Vgs) |
| 76nC@10V |
46nC@10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |
