| Model Number |
| FDS8884 |
FQI7P06TU |
| Model Name |
| onsemi FDS8884 |
onsemi FQI7P06TU |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 30V 8.5A 23mΩ@10V,8.5A 2.5W 2.5V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS |
60V 7A 410mΩ@3.5A,10V 4V@250uA 1PCSPChannel I2PAK(TO-262) MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.207 grams / 0.007302 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| SOIC-8 |
I2PAK(TO-262) |
| Package / Arrange |
| Tape & Reel (TR) |
Tube-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 30V |
60V |
| Continuous Drain Current (Id) |
| 8.5A |
7A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 23mΩ@10V,8.5A |
410mΩ@3.5A,10V |
| Power Dissipation (Pd) |
| 2.5W |
3.75W;45W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 2.5V@250uA |
4V@250uA |
| Type |
| 1PCSNChannel |
1PCSPChannel |
| Input Capacitance (Ciss@Vds) |
| 635pF@15V |
295pF@25V |
| Total Gate Charge (Qg@Vgs) |
| 13nC@10V |
8.2nC@10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |
