Model Number |
FDS8884 |
NTTFS1D2N02P1E |
Model Name |
onsemi FDS8884 |
onsemi NTTFS1D2N02P1E |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
30V 8.5A 23mΩ@10V,8.5A 2.5W 2.5V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS |
25V 0.86mΩ@10V,38A 2V@934uA 1PCSNChannel PQFN-8(3.3x3.3) MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.207 grams / 0.007302 oz |
1.000 grams / 0.035274 oz |
Package / Case |
SOIC-8 |
PQFN-8(3.3x3.3) |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
30V |
25V |
Continuous Drain Current (Id) |
8.5A |
23A;180A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
23mΩ@10V,8.5A |
0.86mΩ@10V,38A |
Power Dissipation (Pd) |
2.5W |
820mW;52W |
Gate Threshold Voltage (Vgs(th)@Id) |
2.5V@250uA |
2V@934uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
635pF@15V |
4.04nF@13V |
Total Gate Charge (Qg@Vgs) |
13nC@10V |
[email protected] |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |