Model Number |
FDS8884 |
NVATS5A107PLZT4G |
Model Name |
onsemi FDS8884 |
onsemi NVATS5A107PLZT4G |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
30V 8.5A 23mΩ@10V,8.5A 2.5W 2.5V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS |
40V 55A 13mΩ@10V,25A 60W 2.6V@1mA 1PCSPChannel TO-252-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.207 grams / 0.007302 oz |
0.494 grams / 0.017425 oz |
Package / Case |
SOIC-8 |
TO-252-3 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
- |
Drain Source Voltage (Vdss) |
30V |
40V |
Continuous Drain Current (Id) |
8.5A |
55A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
23mΩ@10V,8.5A |
13mΩ@10V,25A |
Power Dissipation (Pd) |
2.5W |
60W |
Gate Threshold Voltage (Vgs(th)@Id) |
2.5V@250uA |
2.6V@1mA |
Type |
1PCSNChannel |
1PCSPChannel |
Input Capacitance (Ciss@Vds) |
635pF@15V |
2.4nF@20V |
Total Gate Charge (Qg@Vgs) |
13nC@10V |
47nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |