| Model Number |
| FQB7N10TM |
FDS6162N3 |
| Model Name |
| onsemi FQB7N10TM |
onsemi FDS6162N3 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 100V 7.3A 350mΩ@3.65A,10V 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS |
20V 21A 3W 4.5mΩ@21A,4.5V 1.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.220 grams / 0.00776 oz |
| Package / Case |
| D2PAK(TO-263) |
SO-8 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 100V |
20V |
| Continuous Drain Current (Id) |
| 7.3A |
21A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 350mΩ@3.65A,10V |
4.5mΩ@21A,4.5V |
| Power Dissipation (Pd) |
| 3.75W;40W |
3W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4V@250uA |
1.5V@250uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 250pF@25V |
5.521nF@10V |
| Total Gate Charge (Qg@Vgs) |
| 7.5nC@10V |
[email protected] |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |
