| Model Number |
| FQI4N25TU |
FDS6676AS-G |
| Model Name |
| onsemi FQI4N25TU |
onsemi FDS6676AS-G |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 250V 3.6A 1.75Ω@1.8A,10V 5V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS |
30V 14.5A 6mΩ@14.5A,10V 1W 3V@1mA 1PCSNChannel SOIC-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.215 grams / 0.007584 oz |
| Package / Case |
| I2PAK(TO-262) |
SOIC-8 |
| Package / Arrange |
| Tube-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 250V |
30V |
| Continuous Drain Current (Id) |
| 3.6A |
14.5A |
| Power Dissipation (Pd) |
| 3.13W;52W |
1W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 1.75Ω@1.8A,10V |
6mΩ@14.5A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 5V@250uA |
3V@1mA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 200pF@25V |
2.51nF@15V |
| Total Gate Charge (Qg@Vgs) |
| 5.6nC@10V |
63nC@10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |
