| Model Number |
| FQU10N20LTU |
NDS8961 |
| Model Name |
| onsemi FQU10N20LTU |
onsemi NDS8961 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 200V 7.6A 360mΩ@3.8A,10V 2V@250uA 1PCSNChannel IPAK MOSFETs ROHS |
30V 3.1A 100mΩ@3.1A,10V 3V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.215 grams / 0.007584 oz |
| Package / Case |
| IPAK |
SOIC-8 |
| Package / Arrange |
| Tube-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 200V |
30V |
| Continuous Drain Current (Id) |
| 7.6A |
3.1A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 360mΩ@3.8A,10V |
100mΩ@3.1A,10V |
| Power Dissipation (Pd) |
| 2.5W;51W |
N/A |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 2V@250uA |
3V@250uA |
| Type |
| 1PCSNChannel |
2 N-Channel |
| Input Capacitance (Ciss@Vds) |
| 830pF@25V |
190pF@15V |
| Total Gate Charge (Qg@Vgs) |
| 17nC@5V |
10nC@10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |
