| Model Number |
| IRFS820B |
FDMD8560L |
| Model Name |
| onsemi IRFS820B |
onsemi FDMD8560L |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 500V 2.5A 2.6Ω@1.25A,10V 33W 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS |
Power(5x6) MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-220F-3 |
Power(5x6) |
| Package / Arrange |
| Bag-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 500V |
- |
| Continuous Drain Current (Id) |
| 2.5A |
- |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 2.6Ω@1.25A,10V |
- |
| Power Dissipation (Pd) |
| 33W |
- |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4V@250uA |
- |
| Type |
| 1PCSNChannel |
- |
| Input Capacitance (Ciss@Vds) |
| 610pF@25V |
- |
| Total Gate Charge (Qg@Vgs) |
| 18nC@10V |
- |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
N/A |
