| Model Number |
| IRFW620BTM |
FDD8882 |
| Model Name |
| onsemi IRFW620BTM |
onsemi FDD8882 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 200V 5A 800mΩ@2.5A,10V 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS |
TO-252 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.085 grams / 0.002998 oz |
| Package / Case |
| D2PAK(TO-263) |
TO-252 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 200V |
N/A |
| Continuous Drain Current (Id) |
| 5A |
N/A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 800mΩ@2.5A,10V |
N/A |
| Power Dissipation (Pd) |
| 3.13W;47W |
N/A |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4V@250uA |
N/A |
| Type |
| 1PCSNChannel |
N/A |
| Input Capacitance (Ciss@Vds) |
| 390pF@25V |
N/A |
| Total Gate Charge (Qg@Vgs) |
| 16nC@10V |
N/A |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
N/A |
