Model Number |
IRFW620BTM |
NTD6414ANT4G |
Model Name |
onsemi IRFW620BTM |
onsemi NTD6414ANT4G |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
200V 5A 800mΩ@2.5A,10V 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS |
100V 32A 37mΩ@32A,10V 100W 4V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.376 grams / 0.013263 oz |
Package / Case |
D2PAK(TO-263) |
TO-252 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
200V |
100V |
Continuous Drain Current (Id) |
5A |
32A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
800mΩ@2.5A,10V |
37mΩ@32A,10V |
Power Dissipation (Pd) |
3.13W;47W |
100W |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@250uA |
4V@250uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
390pF@25V |
1.45nF@25V |
Total Gate Charge (Qg@Vgs) |
16nC@10V |
40nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |