Compare onsemi – KSP27TA vs onsemi – MJD122-1G Specifications

KSP27TA MJD122-1G
Model Number
KSP27TA MJD122-1G
Model Name
onsemi KSP27TA onsemi MJD122-1G
Category
Darlington Transistors Darlington Transistors
Brand
onsemi onsemi
Description
10000@100mA,5V 60V NPN 500mA 625mW TO-92-3 Darlington Transistors ROHS 100V 1000@4V,4A NPN 8A 1.75W DPAK Darlington Transistors ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.466 grams / 0.016438 oz
Package / Case
TO-92-3 DPAK
Package / Arrange
Tape & Reel (TR) Tube-packed
Battery
No No
ECCN
EAR99 EAR99
DC current gain (hFE@Vce,Ic)
10000@100mA,5V 1000@4V,4A
Collector-emitter voltage (Vceo)
60V 100V
Transistor Type
NPN NPN
Transition frequency (fT)
- 4MHz
Collector cut-off current (Icbo@Vcb)
100nA 10uA
Collector Current (Ic)
500mA 8A
Power Dissipation (Pd)
625mW 1.75W
Operating Temperature
- -65℃~+150℃@(Tj)
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)
1.5V@100uA,100mA 4V@8A,80mA

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