| Model Number |
| MJ11016G |
BD676AS |
| Model Name |
| onsemi MJ11016G |
onsemi BD676AS |
| Category |
| Darlington Transistors |
Darlington Transistors |
| Brand |
| onsemi |
onsemi |
| Description |
| 1000@5V,20A 120V NPN 30A 200W TO-204(TO-3) Darlington Transistors ROHS |
750@2A,3V 45V PNP 4A 14W TO-126-3 Darlington Transistors ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 13.000 grams / 0.458562 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-204(TO-3) |
TO-126-3 |
| Package / Arrange |
| Tray |
Bag-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| DC current gain (hFE@Vce,Ic) |
| 1000@5V,20A |
750@2A,3V |
| Collector-emitter voltage (Vceo) |
| 120V |
45V |
| Transistor Type |
| NPN |
PNP |
| Transition frequency (fT) |
| 4MHz |
- |
| Collector cut-off current (Icbo@Vcb) |
| 1mA |
500uA |
| Collector Current (Ic) |
| 30A |
4A |
| Operating Temperature |
| -55℃~+200℃@(Tj) |
- |
| Power Dissipation (Pd) |
| 200W |
14W |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) |
| 4V@30A,300mA |
2.8V@40mA,2A |
