| Model Number |
| MJD122G |
2SD1111-AA |
| Model Name |
| onsemi MJD122G |
onsemi 2SD1111-AA |
| Category |
| Darlington Transistors |
Darlington Transistors |
| Brand |
| onsemi |
onsemi |
| Description |
| 100V 1000@4V,4A NPN 8A 20W TO-252-2(DPAK) Darlington Transistors ROHS |
5000@50mA,2V 50V NPN 700mA 600mW NP-3 Darlington Transistors ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.613 grams / 0.021623 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-252-2(DPAK) |
NP-3 |
| Package / Arrange |
| Tube-packed |
Bag-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Collector-emitter voltage (Vceo) |
| 100V |
50V |
| DC current gain (hFE@Vce,Ic) |
| 1000@4V,4A |
5000@50mA,2V |
| Transistor Type |
| NPN |
NPN |
| Transition frequency (fT) |
| 4MHz |
200MHz |
| Collector cut-off current (Icbo@Vcb) |
| 10uA |
100nA |
| Collector Current (Ic) |
| 8A |
700mA |
| Operating Temperature |
| -65℃~+150℃@(Tj) |
- |
| Power Dissipation (Pd) |
| 20W |
600mW |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) |
| 4V@8A,80mA |
1.2V@100uA,100mA |
