| Model Number |
| NDH8502P |
FDN359BN |
| Model Name |
| onsemi NDH8502P |
onsemi FDN359BN |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 30V 2.2A 110mΩ@2.2A,10V 3V@250uA 2 P-Channel TSOP-8-3.30mm MOSFETs ROHS |
30V 2.7A 500mW 46mΩ@10V,2.7A 3V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.030 grams / 0.001058 oz |
| Package / Case |
| TSOP-8-3.30mm |
SOT-23 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 30V |
30V |
| Continuous Drain Current (Id) |
| 2.2A |
2.7A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 110mΩ@2.2A,10V |
46mΩ@10V,2.7A |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 3V@250uA |
3V@250uA |
| Type |
| 2 P-Channel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 340pF@15V |
650pF@15V |
| Total Gate Charge (Qg@Vgs) |
| 14.5nC@10V |
7nC@5V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |
