| Model Number |
| NDH8502P |
IRFW640BTM |
| Model Name |
| onsemi NDH8502P |
onsemi IRFW640BTM |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 30V 2.2A 110mΩ@2.2A,10V 3V@250uA 2 P-Channel TSOP-8-3.30mm MOSFETs ROHS |
200V 18A 3.13W 180mΩ@9A,10V 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TSOP-8-3.30mm |
D2PAK(TO-263) |
| Package / Arrange |
| Tape & Reel (TR) |
Bag-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 30V |
200V |
| Continuous Drain Current (Id) |
| 2.2A |
18A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 110mΩ@2.2A,10V |
180mΩ@9A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 3V@250uA |
4V@250uA |
| Type |
| 2 P-Channel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 340pF@15V |
1.7nF@25V |
| Total Gate Charge (Qg@Vgs) |
| 14.5nC@10V |
58nC@10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |
