| Model Number |
| NDS9959 |
FDD10AN06A0Q |
| Model Name |
| onsemi NDS9959 |
onsemi FDD10AN06A0Q |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 50V 2A 900mW 300mΩ@1.5A,10V 4V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS |
60V 11A 135W 10.5mΩ@50A,10V 4V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.215 grams / 0.007584 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| SOIC-8 |
TO-252AA |
| Package / Arrange |
| Tape & Reel (TR) |
Bag-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 50V |
60V |
| Continuous Drain Current (Id) |
| 2A |
11A |
| Power Dissipation (Pd) |
| 900mW |
135W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 300mΩ@1.5A,10V |
10.5mΩ@50A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4V@250uA |
4V@250uA |
| Type |
| 2 N-Channel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 250pF@25V |
1.84nF@25V |
| Total Gate Charge (Qg@Vgs) |
| 15nC@10V |
N/A |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |
