Model Number |
NTMFS4H01NFT3G |
FQI19N20TU |
Model Name |
onsemi NTMFS4H01NFT3G |
onsemi FQI19N20TU |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
25V 334A 0.56mΩ@10V,30A 125W 2.1V@250uA 1PCSNChannel SO-8FL-EP-5.8mm MOSFETs ROHS |
200V 19.4A 150mΩ@9.7A,10V 5V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
SO-8FL-EP-5.8mm |
I2PAK(TO-262) |
Package / Arrange |
Tape & Reel (TR) |
Tube-packed |
Battery |
No |
No |
ECCN |
- |
EAR99 |
Drain Source Voltage (Vdss) |
25V |
200V |
Continuous Drain Current (Id) |
334A |
19.4A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
0.56mΩ@10V,30A |
150mΩ@9.7A,10V |
Power Dissipation (Pd) |
125W |
3.13W;140W |
Gate Threshold Voltage (Vgs(th)@Id) |
2.1V@250uA |
5V@250uA |
Reverse Transfer Capacitance (Crss@Vds) |
175.3pF@12V |
N/A |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
5.538nF@12V |
1.6nF@25V |
Total Gate Charge (Qg@Vgs) |
[email protected] |
40nC@10V |
Operating Temperature |
- |
-55℃~+150℃@(Tj) |