Model Number |
NTMFS4H01NFT3G |
NVD6416ANLT4G |
Model Name |
onsemi NTMFS4H01NFT3G |
onsemi NVD6416ANLT4G |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
25V 334A 0.56mΩ@10V,30A 125W 2.1V@250uA 1PCSNChannel SO-8FL-EP-5.8mm MOSFETs ROHS |
100V 19A 71W 74mΩ@19A,10V 2.2V@250uA 1PCSNChannel DPAK MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.466 grams / 0.016438 oz |
Package / Case |
SO-8FL-EP-5.8mm |
DPAK |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
- |
EAR99 |
Drain Source Voltage (Vdss) |
25V |
100V |
Continuous Drain Current (Id) |
334A |
19A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
0.56mΩ@10V,30A |
74mΩ@19A,10V |
Power Dissipation (Pd) |
125W |
71W |
Gate Threshold Voltage (Vgs(th)@Id) |
2.1V@250uA |
2.2V@250uA |
Reverse Transfer Capacitance (Crss@Vds) |
175.3pF@12V |
N/A |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
5.538nF@12V |
1nF@25V |
Total Gate Charge (Qg@Vgs) |
[email protected] |
40nC@10V |
Operating Temperature |
- |
-55℃~+175℃@(Tj) |