| Model Number |
| NTTFS4C10NTAG |
FDS8882 |
| Model Name |
| onsemi NTTFS4C10NTAG |
onsemi FDS8882 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 30V 7.4mΩ@10V,30A 2.2V@250uA 1PCSNChannel WDFN-8(3.3x3.3) MOSFETs ROHS |
SOIC-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.093 grams / 0.00328 oz |
0.215 grams / 0.007584 oz |
| Package / Case |
| WDFN-8(3.3x3.3) |
SOIC-8 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 30V |
N/A |
| Continuous Drain Current (Id) |
| 8.2A;44A |
N/A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 7.4mΩ@10V,30A |
N/A |
| Power Dissipation (Pd) |
| 790mW;23.6W |
N/A |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 2.2V@250uA |
N/A |
| Type |
| 1PCSNChannel |
N/A |
| Input Capacitance (Ciss@Vds) |
| 993pF@15V |
N/A |
| Total Gate Charge (Qg@Vgs) |
| 18.6nC@10V |
N/A |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
N/A |
