| Model Number |
| NVD5117PLT4G |
FDU8896 |
| Model Name |
| onsemi NVD5117PLT4G |
onsemi FDU8896 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| TO-252-2 MOSFETs ROHS |
30V 5.7mΩ@35A,10V 80W 2.5V@250uA 1PCSNChannel IPAK MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.380 grams / 0.013404 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-252-2 |
IPAK |
| Package / Arrange |
| Tape & Reel (TR) |
Tube-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| - |
30V |
| Continuous Drain Current (Id) |
| - |
17A;94A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
5.7mΩ@35A,10V |
| Power Dissipation (Pd) |
| - |
80W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
N/A |
| Type |
| - |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| - |
2.525nF@15V |
| Total Gate Charge (Qg@Vgs) |
| - |
60nC@10V |
