| Model Number |
| NXH010P120MNF1PTNG |
FDI047AN08A0 |
| Model Name |
| onsemi NXH010P120MNF1PTNG |
onsemi FDI047AN08A0 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 1.2kV 114A 250W 14mΩ@100A,20V 4.3V@40mA 2 N-Channel - MOSFETs ROHS |
75V 80A 4.7mΩ@80A,10V 310W 4V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.494 grams / 0.017425 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| - |
I2PAK(TO-262) |
| Package / Arrange |
| Tray |
Tube-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 1.2kV |
75V |
| Continuous Drain Current (Id) |
| 114A |
80A |
| Power Dissipation (Pd) |
| 250W |
310W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 14mΩ@100A,20V |
4.7mΩ@80A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4.3V@40mA |
4V@250uA |
| Type |
| 2 N-Channel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 4.707nF@800V |
6.6nF@25V |
| Total Gate Charge (Qg@Vgs) |
| 454nC@20V |
138nC@10V |
| Operating Temperature |
| -40℃~+175℃@(Tj) |
-55℃~+175℃@(Tj) |
