| Model Number |
| NXH010P120MNF1PTNG |
FDS6680S |
| Model Name |
| onsemi NXH010P120MNF1PTNG |
onsemi FDS6680S |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 1.2kV 114A 250W 14mΩ@100A,20V 4.3V@40mA 2 N-Channel - MOSFETs ROHS |
30V 11.5A 2.5W 11mΩ@11.5A,10V 3V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.494 grams / 0.017425 oz |
0.215 grams / 0.007584 oz |
| Package / Case |
| - |
SOIC-8 |
| Package / Arrange |
| Tray |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 1.2kV |
30V |
| Continuous Drain Current (Id) |
| 114A |
11.5A |
| Power Dissipation (Pd) |
| 250W |
2.5W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 14mΩ@100A,20V |
11mΩ@11.5A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4.3V@40mA |
3V@250uA |
| Type |
| 2 N-Channel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 4.707nF@800V |
2.01nF@15V |
| Total Gate Charge (Qg@Vgs) |
| 454nC@20V |
24nC@5V |
| Operating Temperature |
| -40℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |
