| Model Number |
| BC857BU3HZGT106 |
2SB1182TLQ |
| Model Name |
| ROHM Semicon BC857BU3HZGT106 |
ROHM Semicon 2SB1182TLQ |
| Category |
| Bipolar Transistors - BJT |
Bipolar Transistors - BJT |
| Brand |
| ROHM Semicon |
ROHM Semicon |
| Description |
| 45V 200mW 210@2mA,5V 100mA PNP UMT-3 Bipolar Transistors - BJT ROHS |
32V 10W 120@500mA,3V 2A PNP TO-252-3 Bipolar Transistors - BJT ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.025 grams / 0.000882 oz |
0.470 grams / 0.016579 oz |
| Package / Case |
| UMT-3 |
TO-252-3 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Collector Cut-Off Current (Icbo) |
| 15nA |
1uA |
| Collector-Emitter Breakdown Voltage (Vceo) |
| 45V |
32V |
| Power Dissipation (Pd) |
| 200mW |
10W |
| DC Current Gain (hFE@Ic,Vce) |
| 210@2mA,5V |
120@500mA,3V |
| Collector Current (Ic) |
| 100mA |
2A |
| Transition Frequency (fT) |
| 250MHz |
100MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
| 650mV@100mA,5mA |
500mV@2A,200mA |
| Transistor Type |
| PNP |
PNP |
| Operating Temperature |
| - |
- |
