Compare VBsemi Elec – FQD18N20V2TM-VB vs VBsemi Elec – SI7164DP-T1-GE3-VB Specifications

FQD18N20V2TM-VB SI7164DP-T1-GE3-VB
Model Number
FQD18N20V2TM-VB SI7164DP-T1-GE3-VB
Model Name
VBsemi Elec FQD18N20V2TM-VB VBsemi Elec SI7164DP-T1-GE3-VB
Category
MOSFETs MOSFETs
Brand
VBsemi Elec VBsemi Elec
Description
200V 30A 55mΩ@10V,30A 1PCSNChannel TO-252-2 MOSFETs ROHS 60V 6mΩ@10V 3.6V 1PCSNChannel DFN-8(5x6) MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.400 grams / 0.01411 oz 0.265 grams / 0.009348 oz
Package / Case
TO-252-2 DFN-8(5x6)
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
200V 60V
Continuous Drain Current (Id)
30A N/A
Drain Source On Resistance (RDS(on)@Vgs,Id)
55mΩ@10V,30A 6mΩ@10V
Power Dissipation (Pd)
- N/A
Gate Threshold Voltage (Vgs(th)@Id)
- 3.6V
Reverse Transfer Capacitance (Crss@Vds)
- N/A
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
- N/A
Total Gate Charge (Qg@Vgs)
- N/A

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