Model Number |
FQD18N20V2TM-VB |
SQS401EN-T1-GE3-VB |
Model Name |
VBsemi Elec FQD18N20V2TM-VB |
VBsemi Elec SQS401EN-T1-GE3-VB |
Category |
MOSFETs |
MOSFETs |
Brand |
VBsemi Elec |
VBsemi Elec |
Description |
200V 30A 55mΩ@10V,30A 1PCSNChannel TO-252-2 MOSFETs ROHS |
40V 12mΩ@10V 3V 1PCSPChannel DFN-8(3x3) MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.400 grams / 0.01411 oz |
0.180 grams / 0.006349 oz |
Package / Case |
TO-252-2 |
DFN-8(3x3) |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
- |
Drain Source Voltage (Vdss) |
200V |
40V |
Continuous Drain Current (Id) |
30A |
N/A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
55mΩ@10V,30A |
12mΩ@10V |
Power Dissipation (Pd) |
- |
N/A |
Gate Threshold Voltage (Vgs(th)@Id) |
- |
3V |
Reverse Transfer Capacitance (Crss@Vds) |
- |
N/A |
Type |
1PCSNChannel |
1PCSPChannel |
Input Capacitance (Ciss@Vds) |
- |
N/A |
Total Gate Charge (Qg@Vgs) |
- |
N/A |