AP100N03AD by A Power microelectronics – Specifications

A Power microelectronics AP100N03AD is a AP100N03AD from A Power microelectronics, part of the MOSFETs. It is designed for 30V 100A 4.8mΩ@10V,30A 46W 1.5V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 100A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.8mΩ@10V,30A
  • Power Dissipation (Pd): 46W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 215pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.614nF@15V
  • Total Gate Charge (Qg@Vgs): 33.7nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.48 grams.

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Full Specifications of AP100N03AD

Model NumberAP100N03AD
Model NameA Power microelectronics AP100N03AD
CategoryMOSFETs
BrandA Power microelectronics
Description30V 100A 4.8mΩ@10V,30A 46W 1.5V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.480 grams / 0.016932 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)100A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.8mΩ@10V,30A
Power Dissipation (Pd)46W
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)215pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.614nF@15V
Total Gate Charge (Qg@Vgs)33.7nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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