AP10N04MSI by A Power microelectronics – Specifications

A Power microelectronics AP10N04MSI is a AP10N04MSI from A Power microelectronics, part of the MOSFETs. It is designed for 40V 10A 1.9W 15mΩ@10V,7A 2.5V@250uA 1PCSNChannel SOT-223-3 MOSFETs ROHS. This product comes in a SOT-223-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 10A
  • Power Dissipation (Pd): 1.9W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 15mΩ@10V,7A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 76pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.013nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.27 grams.

More on AP10N04MSI

Full Specifications of AP10N04MSI

Model NumberAP10N04MSI
Model NameA Power microelectronics AP10N04MSI
CategoryMOSFETs
BrandA Power microelectronics
Description40V 10A 1.9W 15mΩ@10V,7A 2.5V@250uA 1PCSNChannel SOT-223-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.270 grams / 0.009524 oz
Package / CaseSOT-223-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)10A
Power Dissipation (Pd)1.9W
Drain Source On Resistance (RDS(on)@Vgs,Id)15mΩ@10V,7A
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)76pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.013nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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