AP120N03NF by A Power microelectronics – Specifications

A Power microelectronics AP120N03NF is a AP120N03NF from A Power microelectronics, part of the MOSFETs. It is designed for 30V 120A 2mΩ@10V,30A 187W 1.5V@250uA 1PCSNChannel PDFN-8(5x5.8) MOSFETs ROHS. This product comes in a PDFN-8(5x5.8) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 120A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2mΩ@10V,30A
  • Power Dissipation (Pd): 187W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 225pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.345nF@15V
  • Total Gate Charge (Qg@Vgs): 56.9nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.25 grams.

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Full Specifications of AP120N03NF

Model NumberAP120N03NF
Model NameA Power microelectronics AP120N03NF
CategoryMOSFETs
BrandA Power microelectronics
Description30V 120A 2mΩ@10V,30A 187W 1.5V@250uA 1PCSNChannel PDFN-8(5x5.8) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.250 grams / 0.008819 oz
Package / CasePDFN-8(5x5.8)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)120A
Drain Source On Resistance (RDS(on)@Vgs,Id)2mΩ@10V,30A
Power Dissipation (Pd)187W
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)225pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.345nF@15V
Total Gate Charge (Qg@Vgs)56.9nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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