AP120N04P by A Power microelectronics – Specifications

A Power microelectronics AP120N04P is a AP120N04P from A Power microelectronics, part of the MOSFETs. It is designed for 40V 120A 3mΩ@10V,30A 180W 2.8V@250uA 1PCSNChannel TO-220-3L MOSFETs ROHS. This product comes in a TO-220-3L package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 120A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3mΩ@10V,30A
  • Power Dissipation (Pd): 180W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.8V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 317pF@20V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.9nF@20V
  • Total Gate Charge (Qg@Vgs): 80nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.47 grams.

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Full Specifications of AP120N04P

Model NumberAP120N04P
Model NameA Power microelectronics AP120N04P
CategoryMOSFETs
BrandA Power microelectronics
Description40V 120A 3mΩ@10V,30A 180W 2.8V@250uA 1PCSNChannel TO-220-3L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.470 grams / 0.087127 oz
Package / CaseTO-220-3L
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)120A
Drain Source On Resistance (RDS(on)@Vgs,Id)3mΩ@10V,30A
Power Dissipation (Pd)180W
Gate Threshold Voltage (Vgs(th)@Id)2.8V@250uA
Reverse Transfer Capacitance (Crss@Vds)317pF@20V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.9nF@20V
Total Gate Charge (Qg@Vgs)80nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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