AP120N06P by A Power microelectronics – Specifications

A Power microelectronics AP120N06P is a AP120N06P from A Power microelectronics, part of the MOSFETs. It is designed for 65V 125A 172W 4.8mΩ@10V,55A 2.8V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 65V
  • Continuous Drain Current (Id): 125A
  • Power Dissipation (Pd): 172W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.8mΩ@10V,55A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.8V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 306pF@30V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.135nF@30V
  • Total Gate Charge (Qg@Vgs): 77nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.87 grams.

More on AP120N06P

Full Specifications of AP120N06P

Model NumberAP120N06P
Model NameA Power microelectronics AP120N06P
CategoryMOSFETs
BrandA Power microelectronics
Description65V 125A 172W 4.8mΩ@10V,55A 2.8V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.870 grams / 0.101236 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)65V
Continuous Drain Current (Id)125A
Power Dissipation (Pd)172W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.8mΩ@10V,55A
Gate Threshold Voltage (Vgs(th)@Id)2.8V@250uA
Reverse Transfer Capacitance (Crss@Vds)306pF@30V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.135nF@30V
Total Gate Charge (Qg@Vgs)77nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare A Power microelectronics - AP120N06P With Other 200 Models

Related Models - AP120N06P Alternative

Scroll to Top