AP120N08T by A Power microelectronics – Specifications

A Power microelectronics AP120N08T is a AP120N08T from A Power microelectronics, part of the MOSFETs. It is designed for 85V 120A 4.5mΩ@10V,50A 220W 3V@250uA 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 85V
  • Continuous Drain Current (Id): 120A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.5mΩ@10V,50A
  • Power Dissipation (Pd): 220W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 35pF@40V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.032nF@40V
  • Total Gate Charge (Qg@Vgs): 65.7nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.81 grams.

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Full Specifications of AP120N08T

Model NumberAP120N08T
Model NameA Power microelectronics AP120N08T
CategoryMOSFETs
BrandA Power microelectronics
Description85V 120A 4.5mΩ@10V,50A 220W 3V@250uA 1PCSNChannel TO-263 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.810 grams / 0.028572 oz
Package / CaseTO-263
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)85V
Continuous Drain Current (Id)120A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.5mΩ@10V,50A
Power Dissipation (Pd)220W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)35pF@40V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.032nF@40V
Total Gate Charge (Qg@Vgs)65.7nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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