AP15G04NF by A Power microelectronics – Specifications

A Power microelectronics AP15G04NF is a AP15G04NF from A Power microelectronics, part of the MOSFETs. It is designed for 40V 13.5mΩ@10V,15A 1.6V@250uA 1PCSNChannel+1PCSPChannel DFN-8(4.9x5.8) MOSFETs ROHS. This product comes in a DFN-8(4.9x5.8) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 21A;18A
  • Power Dissipation (Pd): 25W;31.3W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 13.5mΩ@10V,15A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 76pF@15V
  • Type: 1PCSNChannel+1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.013nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.226 grams.

More on AP15G04NF

Full Specifications of AP15G04NF

Model NumberAP15G04NF
Model NameA Power microelectronics AP15G04NF
CategoryMOSFETs
BrandA Power microelectronics
Description40V 13.5mΩ@10V,15A 1.6V@250uA 1PCSNChannel+1PCSPChannel DFN-8(4.9x5.8) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.226 grams / 0.007972 oz
Package / CaseDFN-8(4.9x5.8)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)21A;18A
Power Dissipation (Pd)25W;31.3W
Drain Source On Resistance (RDS(on)@Vgs,Id)13.5mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)@Id)1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds)76pF@15V
Type1PCSNChannel+1PCSPChannel
Input Capacitance (Ciss@Vds)1.013nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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