AP15N10D by A Power microelectronics – Specifications

A Power microelectronics AP15N10D is a AP15N10D from A Power microelectronics, part of the MOSFETs. It is designed for 100V 19.3A 65mΩ@10V,5A 30W 1.85V@250uA 1PCSNChannel TO-252-3L MOSFETs ROHS. This product comes in a TO-252-3L package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 19.3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 65mΩ@10V,5A
  • Power Dissipation (Pd): 30W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.85V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 40pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.1nF@15V
  • Total Gate Charge (Qg@Vgs): 11.9nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.

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Full Specifications of AP15N10D

Model NumberAP15N10D
Model NameA Power microelectronics AP15N10D
CategoryMOSFETs
BrandA Power microelectronics
Description100V 19.3A 65mΩ@10V,5A 30W 1.85V@250uA 1PCSNChannel TO-252-3L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.500 grams / 0.017637 oz
Package / CaseTO-252-3L
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)19.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)65mΩ@10V,5A
Power Dissipation (Pd)30W
Gate Threshold Voltage (Vgs(th)@Id)1.85V@250uA
Reverse Transfer Capacitance (Crss@Vds)40pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.1nF@15V
Total Gate Charge (Qg@Vgs)11.9nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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