AP180N08P by A Power microelectronics – Specifications

A Power microelectronics AP180N08P is a AP180N08P from A Power microelectronics, part of the MOSFETs. It is designed for 85V 180A 2.9mΩ@10V,50A 284W 3V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 85V
  • Continuous Drain Current (Id): 180A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.9mΩ@10V,50A
  • Power Dissipation (Pd): 284W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 48nF@40V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 6.813uF@40V
  • Total Gate Charge (Qg@Vgs): 91nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.2 grams.

More on AP180N08P

Full Specifications of AP180N08P

Model NumberAP180N08P
Model NameA Power microelectronics AP180N08P
CategoryMOSFETs
BrandA Power microelectronics
Description85V 180A 2.9mΩ@10V,50A 284W 3V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.200 grams / 0.077603 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)85V
Continuous Drain Current (Id)180A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.9mΩ@10V,50A
Power Dissipation (Pd)284W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)48nF@40V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)6.813uF@40V
Total Gate Charge (Qg@Vgs)91nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare A Power microelectronics - AP180N08P With Other 166 Models

Related Models - AP180N08P Alternative

Scroll to Top