AP20N02BF by A Power microelectronics – Specifications

A Power microelectronics AP20N02BF is a AP20N02BF from A Power microelectronics, part of the MOSFETs. It is designed for 20V 20A 20.8W 11mΩ@4.5V,7.6A 650mV@250uA 1PCSNChannel PQFN-6-EP(2x2) MOSFETs ROHS. This product comes in a PQFN-6-EP(2x2) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 20A
  • Power Dissipation (Pd): 20.8W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 11mΩ@4.5V,7.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 650mV@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 117pF@10V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 888pF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.15 grams.

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Full Specifications of AP20N02BF

Model NumberAP20N02BF
Model NameA Power microelectronics AP20N02BF
CategoryMOSFETs
BrandA Power microelectronics
Description20V 20A 20.8W 11mΩ@4.5V,7.6A 650mV@250uA 1PCSNChannel PQFN-6-EP(2x2) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.150 grams / 0.005291 oz
Package / CasePQFN-6-EP(2x2)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)20A
Power Dissipation (Pd)20.8W
Drain Source On Resistance (RDS(on)@Vgs,Id)11mΩ@4.5V,7.6A
Gate Threshold Voltage (Vgs(th)@Id)650mV@250uA
Reverse Transfer Capacitance (Crss@Vds)117pF@10V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)888pF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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