A Power microelectronics AP2312MI is a AP2312MI from A Power microelectronics, part of the MOSFETs. It is designed for 20V 6.8A 1.5W 12mΩ@4.5V,7.6A 650mV@250uA 1PCSNChannel SOT-23-3L MOSFETs ROHS. This product comes in a SOT-23-3L package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 6.8A
- Power Dissipation (Pd): 1.5W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 12mΩ@4.5V,7.6A
- Gate Threshold Voltage (Vgs(th)@Id): 650mV@250uA
- Reverse Transfer Capacitance (Crss@Vds): 117pF@10V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 888pF@10V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.15 grams.
More on AP2312MI
Full Specifications of AP2312MI
Model Number | AP2312MI |
Model Name | A Power microelectronics AP2312MI |
Category | MOSFETs |
Brand | A Power microelectronics |
Description | 20V 6.8A 1.5W 12mΩ@4.5V,7.6A 650mV@250uA 1PCSNChannel SOT-23-3L MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.150 grams / 0.005291 oz |
Package / Case | SOT-23-3L |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | - |
Drain Source Voltage (Vdss) | 20V |
Continuous Drain Current (Id) | 6.8A |
Power Dissipation (Pd) | 1.5W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 12mΩ@4.5V,7.6A |
Gate Threshold Voltage (Vgs(th)@Id) | 650mV@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 117pF@10V |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 888pF@10V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |
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