AP2N7002AI by A Power microelectronics – Specifications

A Power microelectronics AP2N7002AI is a AP2N7002AI from A Power microelectronics, part of the MOSFETs. It is designed for 60V 300mA 350mW 1.3Ω@5V,400mA 1.2V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 300mA
  • Power Dissipation (Pd): 350mW
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.3Ω@5V,400mA
  • Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 4.2pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 21pF@25V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.15 grams.

More on AP2N7002AI

Full Specifications of AP2N7002AI

Model NumberAP2N7002AI
Model NameA Power microelectronics AP2N7002AI
CategoryMOSFETs
BrandA Power microelectronics
Description60V 300mA 350mW 1.3Ω@5V,400mA 1.2V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.150 grams / 0.005291 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)300mA
Power Dissipation (Pd)350mW
Drain Source On Resistance (RDS(on)@Vgs,Id)1.3Ω@5V,400mA
Gate Threshold Voltage (Vgs(th)@Id)1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds)4.2pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)21pF@25V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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