AP30N15D by A Power microelectronics – Specifications

A Power microelectronics AP30N15D is a AP30N15D from A Power microelectronics, part of the MOSFETs. It is designed for 150V 30A 43mΩ@10V,20A 72.6W 1.8V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 30A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 43mΩ@10V,20A
  • Power Dissipation (Pd): 72.6W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 4pF@75V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.19nF@75V
  • Total Gate Charge (Qg@Vgs): 23nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.48 grams.

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Full Specifications of AP30N15D

Model NumberAP30N15D
Model NameA Power microelectronics AP30N15D
CategoryMOSFETs
BrandA Power microelectronics
Description150V 30A 43mΩ@10V,20A 72.6W 1.8V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.480 grams / 0.016932 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)30A
Drain Source On Resistance (RDS(on)@Vgs,Id)43mΩ@10V,20A
Power Dissipation (Pd)72.6W
Gate Threshold Voltage (Vgs(th)@Id)1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds)4pF@75V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.19nF@75V
Total Gate Charge (Qg@Vgs)23nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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